2014. 12. 01 1/6 semiconductor technical data KF16N25D n channel mos field effect transistor revision no : 2 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters and switching mode power supplies. features h v dss = 250v, i d = 13a h drain-source on resistance : r ds(on) =0.24 ? @v gs = 10v h qg(typ) = 21nc maximum rating (ta=25 ? ) characteristic symbol rating unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 13 a @t c =100 ? 8.1 pulsed (note1) i dp 39* single pulsed avalanche energy (note 2) e as 200 mj repetitive avalanche energy (note 1) e ar 4.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 85 w derate above 25 ? 0.68 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.47 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection * : drain current limited by maximum junction temperature. dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source
2014. 12. 01 2/6 KF16N25D revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 250 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.29 - v/ ? drain cut-off current i dss v ds =250v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.0 - 4.0 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =6.5a - 0.2 0.24 ? dynamic total gate charge q g v ds =200v, i d =16a v gs =10v (note4,5) - 21 - nc gate-source charge q gs - 5 - gate-drain charge q gd - 8 - turn-on delay time t d(on) v dd =125v i d =16a r g =25 ? (note4,5) - 23 - ns turn-on rise time t r - 19 - turn-off delay time t d(off) - 57 - turn-off fall time t f - 22 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 930 - pf output capacitance c oss - 140 - reverse transfer capacitance c rss - 16 - source-drain diode ratings continuous source current i s v gs |